KM416V4104BSL-5 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: KM416V4104BSL-5 
Hersteller: Samsung
Verpackung: TSOP II
Anwendung: 4m16bit33v50ns
Pins:
Temperatur: Min °C | Max °C
Größe: KB
KM416V4104BSL-5 PDF
Datasheet PDF : View
KM416V4104BSL-5 ÄHNLICHES MODELL:
- KM416V4104B
16bit CMOS Dynamic with Extended Data - KM416V4104BS-45
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns - KM416V4104BS-5
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns - KM416V4104BS-6
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns - KM416V4104BSL-45
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power - KM416V4104BSL-5
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power - KM416V4104BSL-6
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power - KM416V4104C
16bit CMOS Dynamic with Extended Data - KM416V4104CS-45
- KM416V4104CS-50
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns - KM416V4104CS-60
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns - KM416V4104CS-L45
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power - KM416V4104CS-L50
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power - KM416V4104CS-L60
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power