KM416V4104BS-6 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: KM416V4104BS-6 
Hersteller: Samsung
Verpackung: TSOP II
Anwendung: 4m16bit33v60ns
Pins:
Temperatur: Min °C | Max °C
Größe: KB
KM416V4104BS-6 PDF
Datasheet PDF : View
KM416V4104BS-6 ÄHNLICHES MODELL:
- KM416V4100B
16bit CMOS Dynamic with Fast Page Mode - KM416V4100BS-45
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns - KM416V4100BS-5
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns - KM416V4100BS-6
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns - KM416V4100BS-L45
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power - KM416V4100BS-L5
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power - KM416V4100BS-L6
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power - KM416V4100C
16bit CMOS Dynamic with Fast Page Mode - KM416V4100CS-45
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns - KM416V4100CS-5
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns - KM416V4100CS-L45
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power - KM416V4100CS-L5
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power - KM416V4100CS-L6
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power - KM416V4104B
16bit CMOS Dynamic with Extended Data - KM416V4104BS-45
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns