M470L2923BN0-CB3 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: M470L2923BN0-CB3 
Hersteller: SAMSUNG[Samsung semiconductor]
Verpackung:
Anwendung: 512mb
Pins:
Temperatur: Min °C | Max °C
Größe: KB
M470L2923BN0-CB3 PDF
Datasheet PDF : View
M470L2923BN0-CB3 ÄHNLICHES MODELL:
- M470L2923BN0-CA2
SDRAM Unbuffered Module Unbuffered Module based 512Mb B-die - M470L2923BN0-CB0
SDRAM Unbuffered Module Unbuffered Module based 512Mb B-die - M470L2923BN0-CB3
SDRAM Unbuffered Module Unbuffered Module based 512Mb B-die - M470L2923BN0-CCC
SDRAM Unbuffered Module Unbuffered Module based 512Mb B-die - M470L2923BN0-CLA2
SDRAM Unbuffered Module Unbuffered Module based 512Mb B-die - M470L2923BN0-CLB0
SDRAM Unbuffered Module Unbuffered Module based 512Mb B-die - M470L2923BN0-CLB3
SDRAM Unbuffered Module Unbuffered Module based 512Mb B-die - M470L2923BN0-CLCC
SDRAM Unbuffered Module Unbuffered Module based 512Mb B-die - M470L2923BNV0-CA2
SDRAM Unbuffered Module Unbuffered Module based 512Mb B-die - M470L2923BNV0-CB0
SDRAM Unbuffered Module Unbuffered Module based 512Mb B-die - M470L2923BNV0-CB3
SDRAM Unbuffered Module Unbuffered Module based 512Mb B-die - M470L2923BNV0-CCC
SDRAM Unbuffered Module Unbuffered Module based 512Mb B-die - M470L2923BNV0-CLA2
SDRAM Unbuffered Module Unbuffered Module based 512Mb B-die - M470L2923BNV0-CLB0
SDRAM Unbuffered Module Unbuffered Module based 512Mb B-die - M470L2923BNV0-CLB3
SDRAM Unbuffered Module Unbuffered Module based 512Mb B-die