KM416V254DL SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: KM416V254DL 
Hersteller: Samsung semiconductor
Verpackung:
Anwendung: 256k16bit256k16
Pins:
Temperatur: Min °C | Max °C
Größe: KB
KM416V254DL PDF
Datasheet PDF :
KM416V254DL ÄHNLICHES MODELL:
- KM416V254D
256K 16Bit CMOS Dynamic with Extended Data - KM416V254DJ-5
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period - KM416V254DJ-6
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period - KM416V254DJ-7
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period - KM416V254DJL-5
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh - KM416V254DJL-6
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh - KM416V254DJL-7
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh - KM416V254DL
256K x 16Bit CMOS Dynamic RAM with Extended Data Out(256K x 16??CMOS ????AM?????????????? - KM416V254DT-5
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period - KM416V254DT-6
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period - KM416V254DT-7
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period - KM416V254DTL-5
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh - KM416V254DTL-6
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh - KM416V254DTL-7
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh - KM416V256D
256K 16Bit CMOS Dynamic with Fast Page Mode