KM416V1204BJ SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: KM416V1204BJ 
Hersteller: Samsung semiconductor
Verpackung:
Anwendung: 16bit
Pins:
Temperatur: Min °C | Max °C
Größe: KB
KM416V1204BJ PDF
Datasheet PDF : View
KM416V1204BJ ÄHNLICHES MODELL:
- KM416V1200B
16Bit CMOS Dynamic with Fast Page Mode - KM416V1200BJ-5
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns - KM416V1200BJ-6
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns - KM416V1200BJ-7
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns - KM416V1200BJL-5
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns - KM416V1200BJL-6
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns - KM416V1200BJL-7
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns - KM416V1200BT-5
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns - KM416V1200BT-6
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns - KM416V1200BT-7
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns - KM416V1200BTL-5
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns - KM416V1200BTL-6
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns - KM416V1200BTL-7
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns - KM416V1200C
16Bit CMOS Dynamic with Fast Page Mode - KM416V1200CJ-5
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns