KM416V1200B SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: KM416V1200B 
Hersteller: Samsung semiconductor
Verpackung:
Anwendung: 16bit
Pins:
Temperatur: Min °C | Max °C
Größe: KB
KM416V1200B PDF
Datasheet PDF : View
KM416V1200B ÄHNLICHES MODELL:
- KM416V1000B
16Bit CMOS Dynamic with Fast Page Mode - KM416V1000BJ-5
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns - KM416V1000BJ-6
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns - KM416V1000BJ-7
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns - KM416V1000BJL-6
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns - KM416V1000BJL-7
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns - KM416V1000BT-5
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns - KM416V1000BT-6
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns - KM416V1000BT-7
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns - KM416V1000BTL-5
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns - KM416V1000BTL-6
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns - KM416V1000BTL-7
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns - KM416V1000C
16Bit CMOS Dynamic with Fast Page Mode - KM416V1000CJ-5
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns - KM416V1000CJ-6
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns