KM416V1000BT-6 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: KM416V1000BT-6 
Hersteller: Samsung
Verpackung: TSOP
Anwendung: 1m16bit33v60ns
Pins:
Temperatur: Min °C | Max °C
Größe: KB
KM416V1000BT-6 PDF
Datasheet PDF : View
KM416V1000BT-6 ÄHNLICHES MODELL:
- KM416V1000B
16Bit CMOS Dynamic with Fast Page Mode - KM416V1000BJ-5
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns - KM416V1000BJ-6
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns - KM416V1000BJ-7
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns - KM416V1000BJL-6
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns - KM416V1000BJL-7
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns - KM416V1000BT-5
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns - KM416V1000BT-6
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns - KM416V1000BT-7
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns - KM416V1000BTL-5
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns - KM416V1000BTL-6
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns - KM416V1000BTL-7
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns - KM416V1000C
16Bit CMOS Dynamic with Fast Page Mode - KM416V1000CJ-5
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns - KM416V1000CJ-6
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns