KM416C254DT-6 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: KM416C254DT-6 
Hersteller: Samsung
Verpackung: TSOP II
Anwendung: 256k16bit50v60ns8ms
Pins:
Temperatur: Min °C | Max °C
Größe: KB
KM416C254DT-6 PDF
Datasheet PDF : View
KM416C254DT-6 ÄHNLICHES MODELL:
- KM416C254D
256K 16Bit CMOS Dynamic with Extended Data - KM416C254DJ-5
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period - KM416C254DJ-6
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period - KM416C254DJ-7
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period - KM416C254DJL-5
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh - KM416C254DJL-6
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh - KM416C254DJL-7
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh - KM416C254DL
256K x 16Bit CMOS Dynamic RAM with Extended Data Out(256K x 16??CMOS ????AM?????????????? - KM416C254DT-5
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period - KM416C254DT-6
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period - KM416C254DT-7
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period - KM416C254DTL-5
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh - KM416C254DTL-6
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh - KM416C254DTL-7
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh