KM416C1204BT-L6 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: KM416C1204BT-L6 
Hersteller: Samsung
Verpackung: TSOP II
Anwendung: 5v1m1660ns
Pins:
Temperatur: Min °C | Max °C
Größe: KB
KM416C1204BT-L6 PDF
Datasheet PDF : View
KM416C1204BT-L6 ÄHNLICHES MODELL:
- KM416C1204BJ-45
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1204BJ-5
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1204BJ-6
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416C1204BJ-7
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416C1204BJ-L45
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1204BJ-L5
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1204BJ-L6
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416C1204BJ-L7
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416C1204BT-45
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1204BT-5
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1204BT-6
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416C1204BT-7
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416C1204BT-L45
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1204BT-L5
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1204BT-L6
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns