KM416C1004BT-L5 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: KM416C1004BT-L5 
Hersteller: Samsung
Verpackung: TSOP II
Anwendung: 5v1m1650ns
Pins:
Temperatur: Min °C | Max °C
Größe: KB
KM416C1004BT-L5 PDF
Datasheet PDF : View
KM416C1004BT-L5 ÄHNLICHES MODELL:
- KM416C1004BJ-45
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1004BJ-5
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1004BJ-6
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416C1004BJ-7
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416C1004BJ-L45
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1004BJ-L5
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1004BJ-L6
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416C1004BJ-L7
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416C1004BT-45
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1004BT-5
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1004BT-6
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns - KM416C1004BT-7
5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns - KM416C1004BT-L45
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns - KM416C1004BT-L5
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns - KM416C1004BT-L6
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns