BUZ312 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: BUZ312 
Hersteller: Siemens Semiconductor Group
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
BUZ312 PDF
Datasheet PDF : View
BUZ312 ÄHNLICHES MODELL:
- BUZ305
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated) - BUZ307
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated) - BUZ308
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated) - BUZ309
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 2.8A I(D) | TO-218 - BUZ30A
- BUZ30AC67078-S1303A3
TRANSISTOR TO 220 MOSFET N KANAL - BUZ30ASMD
SIPMOS Power Transistor - BUZ31
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated) - BUZ310
SIPMOS Power Transistor channel Enhancement mode) - BUZ311
SIPMOS Power Transistor channel Enhancement mode) - BUZ312
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated) - BUZ31C67078-S1304A2
TRANSISTOR TO 220 MOSFET N KANAL - BUZ31L
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated Logic Level) - BUZ31SMD
SIPMOS Power Transistor - BUZ32
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated)