BUZ215 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: BUZ215 
Hersteller: Siemens Semiconductor Group
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
BUZ215 PDF
Datasheet PDF : View
BUZ215 ÄHNLICHES MODELL:
- BUZ20
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated) - BUZ201
main ratings - BUZ202
MAIN RATINGS - BUZ205
SIPMOS Power Transistor channel Enhancement mode FREDFET) - BUZ206
main ratings - BUZ21
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated) - BUZ210
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 10.5A I(D) | TO-204AA - BUZ211
N-Channel Enhancement MOSFET - BUZ213
main ratings - BUZ214
main ratings - BUZ215
SIPMOS Power Transistor channel Enhancement mode FREDFET) - BUZ216
main ratings - BUZ21CHIP
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 19A I(D) | CHIP - BUZ21L
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated Logic Level) - BUZ21SMD
SIPMOS Power Transistor