BUZ111SL SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: BUZ111SL 
Hersteller: Siemens Semiconductor Group
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
BUZ111SL PDF
Datasheet PDF : View
BUZ111SL ÄHNLICHES MODELL:
- BUZ11
CHANNEL 0.03W TO-220 STripFET] MOSFET - BUZ110S
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated dv/dt rated) - BUZ110SE3045
SIPMOS? Power Transistor - BUZ110SE3045A
SIPMOS? Power Transistor - BUZ110SL
SIPMOS Power Transistor channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) - BUZ110SLE3045
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB - BUZ111
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated dv/dt rated) - BUZ111S
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated dv/dt rated) - BUZ111SE3045
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB - BUZ111SE3045A
SIPMOS Power Transistor - BUZ111SL
SIPMOS Power Transistor channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) - BUZ111SLE3045
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB - BUZ111SQ67040S4003A2
TRANSISTOR LEISTUNGS MOSFET - BUZ11A
CHANNEL 0.045W TO-220 STripFET] MOSFET - BUZ11ACHIP
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | CHIP