BUZ104SL-4 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: BUZ104SL-4 
Hersteller: Siemens Semiconductor Group
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
BUZ104SL-4 PDF
Datasheet PDF : View
BUZ104SL-4 ÄHNLICHES MODELL:
- BUZ104S
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature) - BUZ104SE3045
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 13.5A I(D) | TO-263AB - BUZ104SE3045A
N-Channel Enhancement MOSFET - BUZ104SL
SIPMOS Power Transistor channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature) - BUZ104SL-4
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated rated) - BUZ104SL4
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 55V V(BR)DSS | 3.2A I(D) | SO - BUZ104SLE3045
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 12.5A I(D) | TO-263AB