BUZ102S-4 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: BUZ102S-4 
Hersteller: Infineon
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
BUZ102S-4 PDF
Datasheet PDF : View
BUZ102S-4 ÄHNLICHES MODELL:
- BUZ102
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated rated) - BUZ102AL
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated Logic Level rated) - BUZ102S
SIPMOS Power Transistor channel Enhancement mode Avalanche-rated dv/dt rated) - BUZ102S-4
SIPMOS Power Transistor - BUZ102S4
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 55V V(BR)DSS | 6.4A I(D) | SO - BUZ102SE3045
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,52A I(D),TO-263AB - BUZ102SE3045A
SIPMOS Power Transistor - BUZ102SL
SIPMOS Power Transistor channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) - BUZ102SL-4
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated rated) - BUZ102SL4
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 55V V(BR)DSS | 6.2A I(D) | SO - BUZ102SLE3045
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 47A I(D) | TO-263AB