BUT11AI SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: BUT11AI 
Hersteller: Philips Semiconductors
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
BUT11AI PDF
Datasheet PDF : View
BUT11AI ÄHNLICHES MODELL:
- BUT100
HIGH POWER SILICON TRANSISTOR - BUT10003
HIGH POWER SILICON TRANSISTOR - BUT100_03
HIGH POWER NPN SILICON TRANSISTOR - BUT102
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 50A I(C) | TO-3 - BUT11
Silicon diffused power transistors - BUT11/B
TRANSISTOR HOCHSPANNUNG BIPOLAR - BUT111
From datasheet system - BUT11A
HIGH VOLTAGE FAST-SWITCHING POWER TRANSISTOR - BUT11A/B
TRANSISTOR HOCHSPANNUNG BIPOLAR - BUT11A04
HIGH VOLTAGE FAST-SWITCHING POWER TRANSISTOR - BUT11AF
POWER TRANSISTOR AMPERES VOLTS WATTS - BUT11AF/D
Full Pak High Voltage NPN Power Transistor - BUT11AFI
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 5A I(C) | TO-220 - BUT11AI
Silicon Diffused Power Transistor - BUT11AI2
From datasheet system