BUP410D SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: BUP410D 
Hersteller: Siemens Semiconductor Group
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
BUP410D PDF
Datasheet PDF : View
BUP410D ÄHNLICHES MODELL:
- BUP40
Silicon Power Transistor - BUP400
- BUP400D
- BUP401
IGBT forward voltage drop High switching speed tail current Latch-up free Avalanche rated) - BUP402
- BUP403
IGBT - BUP406
BUP406 - Tranzystor du?? mocy wysokonapi??owy - BUP407
BUP407 - Tranzystor du?? mocy wysokonapi??owy - BUP41
Silicon Power Transistor - BUP410
IGBT forward voltage drop High switching speed tail current Latch-up free Avalanche rated - BUP410D
IGBT With Antiparallel Diode forward voltage drop High switching speed tail current Latch-up free Including fast free-wheel diode) - BUP42
TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 10A I(C) | TO-220AB - BUP46
NPN - BUP47
NPN - BUP48
Bipolar Device Hermetically sealed Metal Package