BFP181W SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: BFP181W 
Hersteller: Siemens Semiconductor Group
Verpackung:
Anwendung: 05ma12ma
Pins:
Temperatur: Min °C | Max °C
Größe: KB
BFP181W PDF
Datasheet PDF : View
BFP181W ÄHNLICHES MODELL:
- BFP136
- BFP136W
Silicon Transistor power amplifier DECT systems) - BFP177
BFP177 - Tranzystor krzemowy ??dniej mocy. wielkiej cz??otliwo?? - BFP178
BFP178 - Tranzystor krzemowy ??dniej mocy. wielkiej cz??otliwo?? - BFP179
BFP179 - Tranzystor krzemowy ??dniej mocy. wielkiej cz??otliwo?? - BFP180
Silicon Transistor - BFP180W
- BFP181
Silicon Transistor noise, high-gain broadband amplifiers collector currents from 0.5mA 12mA) - BFP181R
Silicon Transistor noise, high-gain broadband amplifiers collector currents from 0.5mA 12mA) - BFP181T
Silicon Planar Transistor - BFP181TRW
Silicon Planar Transistor - BFP181TW
Silicon Planar Transistor - BFP181W
Silicon Transistor noise, high-gain broadband amplifiers collector currents from 0.5mA 12mA) - BFP182
Silicon Transistor - BFP182R
Silicon Transistor