BF998RBW SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: BF998RBW 
Hersteller: Vishay Telefunken
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
BF998RBW PDF
Datasheet PDF : View
BF998RBW ÄHNLICHES MODELL:
- BF998
Silicon N-channel dual-gate MOS-FETs - BF998/T1
TRANSISTOR MOSFET - BF998A
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF998B
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF998R
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high quality factor) - BF998RA
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF998RAW
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF998RAW-GS08
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF998RB
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF998RBW
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF998RBW-GS08
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF998RT/R
TRANSISTOR | MOSFET | N-CHANNEL | 12V V(BR)DSS | 30MA I(D) | SOT-143R - BF998RW
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode - BF998T/R
TRANSISTOR | MOSFET | N-CHANNEL | 12V V(BR)DSS | 30MA I(D) | SOT-143 - BF998W
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high quality factor)