BF410D SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: BF410D 
Hersteller: Philips Semiconductors
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
BF410D PDF
Datasheet PDF : View
BF410D ÄHNLICHES MODELL:
- BF410
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR APPLICATIONS - BF410A
N-channel silicon field-effect transistors - BF410B
N-channel silicon field-effect transistors - BF410C
N-channel silicon field-effect transistors - BF410D
N-channel silicon field-effect transistors - BF411
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 50MA I(C) | TO-92 - BF412
TRANSISTOR | BJT | NPN | 130V V(BR)CEO | 50MA I(C) | TO-92 - BF413
TRANSISTOR | BJT | NPN | 170V V(BR)CEO | 50MA I(C) | TO-92 - BF414
Silicon Transistor low-noise, common base stages) - BF419
high-voltage transistor - BF41931
SINGLE PHASE MOULDED BRIDGES