2SK2013_06 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: 2SK2013_06 
Hersteller: Toshiba Semiconductor
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
2SK2013_06 PDF
Datasheet PDF : View
2SK2013_06 ÄHNLICHES MODELL:
- 2SK2010
Very High-Speed Switching Applications - 2SK2011
Very High-Speed Switching Applications - 2SK2012
Very High-Speed Switching Applications - 2SK2013
AUDIO FREQUENCY POWER AMPLIFIER APPLICATION - 2SK201306
CHANNEL TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION - 2SK2013O
TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 1A I(D) | SC-67 - 2SK2013Y
TRANSISTOR | MOSFET | N-CHANNEL | 180V V(BR)DSS | 1A I(D) | SC-67 - 2SK2013_06
N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION - 2SK2018
N-channel MOS-FET - 2SK2018-01
- 2SK2018-01L
N-channel MOS-FET - 2SK2018-01S
N-channel MOS-FET - 2SK2019-01
N-channel MOS-FET