2SD812 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: 2SD812 
Hersteller: Inchange
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
2SD812 PDF
Datasheet PDF : View
2SD812 ÄHNLICHES MODELL:
- 2SD803
DIFFUSED JUNCTION MESA - 2SD806
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 650V V(BR)CEO | 50A I(C) - 2SD809
Audio Frequency Power Amplifier,Low Speed Switching - 2SD811
(2SDxxx) TRANSISTOR - 2SD812
Silicon Power Transistor - 2SD812P
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220AB - 2SD812Q
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220AB - 2SD812R
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220AB - 2SD813
EPITAXIAL PLANAR - 2SD814
Silicon epitaxial planer type(For high breakdown voltage low-frequency low-noise amplification) - 2SD814A
Silicon epitaxial planer type(For high breakdown voltage low-frequency low-noise amplification) - 2SD814AQ
TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346 - 2SD814AR
TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346 - 2SD814AS
TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SOT-346 - 2SD814Q
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SOT-346