1SV102 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: 1SV102 
Hersteller: Toshiba Semiconductor
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
1SV102 PDF
Datasheet PDF : View
1SV102 ÄHNLICHES MODELL:
- 1SV100
SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE - 1SV101
VARIABLE CAPACITANCE DIODE TUNER APPLICATIONS) - 1SV102
- 1SV103
Variable Capacitance Diode, Radio Band Tuning Applications - 1SV121
Silicon Epitaxial Planar Diode High Frequency Attenuator - 1SV123
VARIABLE CAPACITANCE DIODE - 1SV128
DIODE (VHF~UHF BAND ATTENUATOR APPLICATIONS) - 1SV147
BARIABLE CAPACITANCE DIODE RADIO BAND TUNING APPLICATIONS) - 1SV149
BARIABLE CAPACITANCE DIODE RADIO BAND TUNING APPLICATIONS) - 1SV153
- 1SV160
VARIABLE CAPACITANCE DIODE APLICATION RECEIVER) - 1SV161
- 1SV162
- 1SV172
DIODE (VHF~UHF BAND ATTENUATOR APPLICATIONS) - 1SV17207
VHF~UHF Band Attenuator Applications