1SS196_07 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: 1SS196_07 
Hersteller: Toshiba Semiconductor
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
1SS196_07 PDF
Datasheet PDF : View
1SS196_07 ÄHNLICHES MODELL:
- 1SS190
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) - 1SS19007
Ultra High Speed Switching Application - 1SS190_07
Ultra High Speed Switching Application - 1SS193
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) - 1SS19307
Ultra High Speed Switching Application - 1SS193_07
Ultra High Speed Switching Application - 1SS196
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) - 1SS19607
Ultra High Speed Switching Application - 1SS196_07
Ultra High Speed Switching Application - 1SS198
Silicon Schottky Barrier Diode for Various Detector,High Speed Switching - 1SS199
Silicon Schottky Barrier Diode for Various Detector,High Speed Switching - 1SS199MHD
Silicon Schottky Barrier Diode Various Detector High Speed Switching