1N3491R SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: 1N3491R 
Hersteller: Microsemi
Verpackung: DO-21
Anwendung: 500ns
Pins:
Temperatur: Min °C | Max °C
Größe: KB
1N3491R PDF
Datasheet PDF : View
1N3491R ÄHNLICHES MODELL:
- 1N34
POINT CONTACT GERMANIUM DIODE - 1N3457
JEDEC DO-7 PACKAGE - 1N3469
JEDEC DO-7 PACKAGE - 1N3489
FOUR-LAYER (SHOCKLEY) DIODE|24V V(BO) MAX|125UA I(S)|DO-204AA - 1N3489A
FOUR-LAYER (SHOCKLEY) DIODE|24V V(BO) MAX|125UA I(S)|DO-204AA - 1N3490
FOUR-LAYER (SHOCKLEY) DIODE|24V V(BO) MAX|125UA I(S)|DO-204AA - 1N3491
Silicon Power Rectifier - 1N3491R
Standard Rectifier (trr more than 500ns) - 1N3492
Silicon Power Rectifier - 1N3492R
Standard Rectifier (trr more than 500ns) - 1N3493
Silicon Power Rectifier - 1N3493R
Standard Rectifier (trr more than 500ns) - 1N3494
Silicon Power Rectifier - 1N3494R
Standard Rectifier (trr more than 500ns) - 1N3495
Silicon Power Rectifier