MJE170G SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: MJE170G 
Hersteller: ONSEMI[ON Semiconductor]
Verpackung:
Anwendung: 87228722125
Pins:
Temperatur: Min °C | Max °C
Größe: KB
MJE170G PDF
Datasheet PDF : View
MJE170G ÄHNLICHES MODELL:
- MJE1123
DROPOUT TRANSISTOR AMPERES VOLTS - MJE12007
Silicon Power Transistors - MJE122
COMPLEMENTARY SILICON POWER DARLINGTONS - MJE127
COMPLEMENTARY SILICON POWER DARLINGTONS - MJE13001
EPITAXIAL SILICON TRANSISTOR - MJE13001AL
Triple Diffused Silicon Transistor - MJE13002
POWER TRANSISTORS(1.5A,300-400V,40W) - MJE13002A
SILICON TRIPLE DIFFUSED MESA TYPE - MJE13003
SILICON TRANSISTOR - MJE13003-TO-126
EPITAXIAL SILICON TRANSISTOR - MJE13003-TO-220
EPITAXIAL SILICON TRANSISTOR - MJE13003-X-T60-F-K
EPITAXIAL SILICON TRANSISTOR - MJE13003-X-TA3-F-T
EPITAXIAL SILICON TRANSISTOR - MJE13003D
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR - MJE13003G
SWITCHMODE Series Silicon Power Transistor VOLTS WATTS