MJE13007F SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: MJE13007F 
Hersteller: KEC(Korea Electronics)
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
MJE13007F PDF
Datasheet PDF : View
MJE13007F ÄHNLICHES MODELL:
- MJE13001
EPITAXIAL SILICON TRANSISTOR - MJE13001AL
Triple Diffused Silicon Transistor - MJE13002
POWER TRANSISTORS(1.5A,300-400V,40W) - MJE13002A
SILICON TRIPLE DIFFUSED MESA TYPE - MJE13003
SILICON TRANSISTOR - MJE13003-TO-126
EPITAXIAL SILICON TRANSISTOR - MJE13003-TO-220
EPITAXIAL SILICON TRANSISTOR - MJE13003-X-T60-F-K
EPITAXIAL SILICON TRANSISTOR - MJE13003-X-TA3-F-T
EPITAXIAL SILICON TRANSISTOR - MJE13003D
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR - MJE13003G
SWITCHMODE Series Silicon Power Transistor VOLTS WATTS - MJE13003HV
TRIPLE DIFFUSED TRANSISTOR - MJE13003L-X-T60-F-K
EPITAXIAL SILICON TRANSISTOR - MJE13003L-X-TA3-F-T
EPITAXIAL SILICON TRANSISTOR - MJE13004
POWER TRANSISTORS(4A,300-400V,75W)