BDX66B SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: BDX66B 
Hersteller: Inchange Semiconductor Company Limited
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
BDX66B PDF
Datasheet PDF : View
BDX66B ÄHNLICHES MODELL:
- BDX62
TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 8A I(C) | TO-3 - BDX62A
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 8A I(C) | TO-3 - BDX62B
Bipolar Device Hermetically sealed Metal Package - BDX62C
Bipolar Device Hermetically sealed Metal Package - BDX63
EPITAXIAL BASE DARLINGTON POWER TRANSISTOR - BDX63A
EPITAXIAL BASE DARLINGTON POWER TRANSISTOR - BDX63B
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR - BDX63C
EPITAXIAL BASE DARLINGTON POWER TRANSISTOR - BDX64
SILICON DARLINGTONS - BDX64A
PNP SILICON DARLINGTONS - BDX64B
PNP SILICON DARLINGTONS - BDX64C
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package - BDX65
SILICON DARLINGTONS - BDX65A
NPN SILICON DARLINGTONS - BDX65B
SILICON DARLINGTONS