3N246 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: 3N246 
Hersteller: General Semiconductor
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
3N246 PDF
Datasheet PDF : View
3N246 ÄHNLICHES MODELL:
- 3N200
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR - 3N201
DUAL GATE MOSFET AMPLIFIER - 3N202
DUAL GATE MOSFET AMPLIFIER - 3N203
DUAL GATE MOSFET AMPLIFIER - 3N204
6367254 MOTOROLA (XSTRS/R - 3N205
Silicon Dual Insulated-Gate Field-Effect Transistors - 3N206
Silicon Dual Insulated-Gate Field-Effect Transistors - 3N209
- 3N211
Dual Gate Mosfet Amplifier(N-Channel, Depletion) - 3N212
- 3N213
- 3N243
High Reliability Opeically Coupled Isolators - 3N243R
High Reliability Opeically Coupled Isolators - 3N243TX
High Reliability Opeically Coupled Isolators - 3N244
High Reliability Opeically Coupled Isolators