2SK200907 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: 2SK200907 
Hersteller: Toshiba Semiconductor
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
2SK200907 PDF
Datasheet PDF : View
2SK200907 ÄHNLICHES MODELL:
- 2SK2000
Power MOSFET - 2SK2000-R
Power MOSFET - 2SK2001-01M
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 15A I(D) | TO-220 - 2SK2002-01MR
N-channel MOS-FET - 2SK2003-01MR
N-channel MOS-FET - 2SK2004-01
- 2SK2004-01L
N-channel MOS-FET - 2SK2004-01S
N-channel MOS-FET - 2SK2005
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-252VAR - 2SK2006
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 5A I(D) | TO-252VAR - 2SK2007
Silicon N-Channel - 2SK2007-E
Silicon Channel - 2SK2008
Silicon N-Channel - 2SK2008-E
Silicon Channel - 2SK2009
CHANNEL TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)