2SD669 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: 2SD669 
Hersteller: Hitachi Semiconductor
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
2SD669 PDF
Datasheet PDF : View
2SD669 ÄHNLICHES MODELL:
- 2SD600
100V/120V, Low-Frequency Power Applications - 2SD600D
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-126 - 2SD600E
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-126 - 2SD600F
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-126 - 2SD600K
100V/120V, Low-Frequency Power Applications - 2SD600KD
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126 - 2SD600KE
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126 - 2SD600KF
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126 - 2SD601
DIFFUSED JUNCTION MESA - 2SD601A
Silicon epitaxial planer type - 2SD601AQ
DIFFUSED JUNCTION MESA - 2SD601AR
DIFFUSED JUNCTION MESA - 2SD601AS
DIFFUSED JUNCTION MESA - 2SD601AX2
Silicon epitaxial planar type - 2SD601AYQ
DIFFUSED JUNCTION MESA