2SB906_07 SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: 2SB906_07 
Hersteller: Toshiba Semiconductor
Verpackung:
Anwendung:
Pins:
Temperatur: Min °C | Max °C
Größe: KB
2SB906_07 PDF
Datasheet PDF : View
2SB906_07 ÄHNLICHES MODELL:
- 2SB900
Silicon Power Transistors - 2SB902
EPITAXIAL PLANAR - 2SB902P
EPITAXIAL PLANAR - 2SB902Q
EPITAXIAL PLANAR - 2SB902R
EPITAXIAL PLANAR - 2SB902S
EPITAXIAL PLANAR - 2SB902T
EPITAXIAL PLANAR - 2SB903
30V/12A High-Speed Switching Applications - 2SB903Q
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 12A I(C) | TO-220AB - 2SB903R
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 12A I(C) | TO-220AB - 2SB903S
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 12A I(C) | TO-220AB - 2SB904
30V/20A High-Speed Switching Applications - 2SB904Q
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 20A I(C) | TO-247VAR - 2SB904R
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 20A I(C) | TO-247VAR - 2SB904S
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 20A I(C) | TO-247VAR