2SA671D SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: 2SA671D 
Hersteller: Mospec Semiconductor
Verpackung:
Anwendung: 50v3a220ab
Pins:
Temperatur: Min °C | Max °C
Größe: KB
2SA671D PDF
Datasheet PDF :
2SA671D ÄHNLICHES MODELL:
- 2SA603
PNP SILICON EPITAXIAL TRANSISTOR - 2SA606
PNP/NPN SILICON EPITAXIAL TRANSISTOR - 2SA607
PNP/NPN SILICON EPITAXIAL TRANSISTOR - 2SA608
Low-Frequency General-Purpose Amplifier Applications - 2SA608K
GENERAL PURPOSE SWITCHING APPLICATIONS - 2SA608KNP
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 - 2SA608KNPD
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 - 2SA608KNPE
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 - 2SA608KNPF
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 - 2SA608KNPG
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 - 2SA608N
Low-Frequency General-Purpose Amplifier Applications - 2SA608NP
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92 - 2SA608NPD
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92 - 2SA608NPE
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92 - 2SA608NPF
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-92