1SS133M SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: 1SS133M 
Hersteller: Taiwan
Verpackung:
Anwendung: 300mw
Pins:
Temperatur: Min °C | Max °C
Größe: KB
1SS133M PDF
Datasheet PDF : View
1SS133M ÄHNLICHES MODELL:
- 1SS101
SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN PROTECTING SOLAR BATTERY - 1SS104
SILICON PLANAR TYPE DIODE - 1SS106
Silicon Schottky Barrier Diode for Various Detector,High Speed Switching - 1SS108
Silicon Schottky Barrier Diode Various Detector High Speed Switching - 1SS110
Silicon Epitaxial Planar Diode Tuner Band Switch - 1SS118
Silicon Epitaxial Planar Diode High Speed Switching - 1SS119
Silicon Epitaxial Planar Diode for High Speed Switching - 1SS120
Silicon Epitaxial Planar Diode High Speed Switching - 1SS123
SILICON SWITCHING DIODE - 1SS123-T1B
Silicon switching diode - 1SS130
HIGH SPEED SWITCHING DIODE - 1SS131
HIGH SPEED SWITCHING DIODE - 1SS132
HIGH SPEED SWITCHING DIODE - 1SS133
Switching diode - 1SS1331
Switching diode