1N5519DUR SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: 1N5519DUR 
Hersteller: MICROSEMI[Microsemi Corporation]
Verpackung:
Anwendung: 500mw
Pins:
Temperatur: Min °C | Max °C
Größe: KB
1N5519DUR PDF
Datasheet PDF : View
1N5519DUR ÄHNLICHES MODELL:
- 1N5519
VOLTAGE AVALANCHE DIODES DO-7 - 1N5519-1
Voltage Surface Mount Avalanche Diodes - 1N5519A
0.4W VOLTAGE AVALANCHE DIODES - 1N5519A-1
Voltage Surface Mount Avalanche Diodes - 1N5519ATR-1
Low Voltage Surface Mount 500 mW Avalanche Diodes - 1N5519AUR
LEADLESS PACKAGE SURFACE MOUNT ZENER DIODE 500mW - 1N5519AUR-1
Voltage Surface Mount Avalanche Diodes - 1N5519AURTR-1
Voltage Surface Mount Avalanche Diodes - 1N5519B
REVERSE LEAKAGE CHARACTERISTICS - 1N5519B(DO35)
Low Voltage Avalanche Zener - 1N5519B-1
REVERSE LEAKAGE CHARACTERISTICS - 1N5519BTR-1
Low Voltage Surface Mount 500 mW Avalanche Diodes - 1N5519BUR
LEADLESS PACKAGE SURFACE MOUNT ZENER DIODE, 500mW - 1N5519BUR-1
LEADLESS PACKAGE SURFACE MOUNT ZENER DIODE, 500mW - 1N5519BURTR-1
Low Voltage Surface Mount 500 mW Avalanche Diodes