1N5519D SPEZIFIKATIONEN UND ANWENDUNG
Elektronische Teile: 1N5519D 
Hersteller: JGD[Jinan Gude Electronic Device]
Verpackung:
Anwendung: 04w
Pins:
Temperatur: Min °C | Max °C
Größe: KB
1N5519D PDF
Datasheet PDF : View
1N5519D ÄHNLICHES MODELL:
- 1N5517
SCHOTTKY RECTIERS SILICON RECTIFIER DIODES - 1N5518
VOLTAGE AVALANCHE DIODES DO-35 - 1N5518-1
VOLTAGE AVALANCHE DIODES DO-35 - 1N5518A
0.4W VOLTAGE AVALANCHE DIODES - 1N5518A-1
Voltage Surface Mount Avalanche Diodes - 1N5518ATR-1
Voltage Surface Mount Avalanche Diodes - 1N5518AUR
LEADLESS PACKAGE SURFACE MOUNT ZENER DIODE 500mW - 1N5518AUR-1
Voltage Surface Mount Avalanche Diodes - 1N5518AURTR-1
Voltage Surface Mount Avalanche Diodes - 1N5518B
REVERSE LEAKAGE CHARACTERISTICS - 1N5518B(DO35)
Low Voltage Avalanche Zener - 1N5518B-1
REVERSE LEAKAGE CHARACTERISTICS - 1N5518BTR-1
Voltage Surface Mount Avalanche Diodes - 1N5518BUR
LEADLESS PACKAGE SURFACE MOUNT ZENER DIODE, 500mW - 1N5518BUR-1
Voltage Surface Mount Avalanche Diodes